semiconductor group 1 02.97 laser diode on submount spl cgxx 1.0 w cw (class 4 laser product) (sfh 4804x2) features efficient radiation source for cw and pulsed operation reliable inga(al)as strained quantum-well material single emitting area 200 m 1 m small c-type copper submount for oem designs applications pumping solid state lasers (nd: yag, yb: yag, ) laser soldering, heating, illumination printing, marking, surface processing medical applications testing and measurement applications type old type (as of oct. 1996) wavelength *) ordering code spl cg81 spl cg85 spl cg94 spl cg98 sfh 480402 C sfh 480442 C 808 nm 850 nm 940 nm 980 nm q62702-p358 on request q62702-p1617 on request *) other wavelengths in the range of 780 nm ... 980 nm are available on request. maximum ratings ( t a = 25 c) parameter symbol values unit min. typ. max. output power (continuous wave) 1) p opt C C 1.1 w output power (quasi-continuous wave) 1) ( t p 150 m s, duty cycle 1 % ) p qcw C C 1.5 w reverse voltage v r CC3v operating temperature 2) t op C 10 + 60 c storage temperature 2) t stg C 40 + 85 c soldering temperature, max. 10 s t s C C 140 c 1) optical power measurements refer to a detector with na = 0.6 2) bedewing is excluded
spl cgxx (sfh 4804x2) semiconductor group 2 characteristics ( t a = 25 c) parameter symbol values unit min. typ. max. emission wavelength 1) l peak 803 840 935 808 850 940 813 860 945 nm spectral width (fwhm) 1) dl 2nm output power 2) p opt 1.0 w differential efficiency 2) 808 nm 850 nm 940 nm h 0.75 0.75 0.70 0.95 0.85 0.80 1.1 1.0 0.9 w/a threshold current 808 nm 850 nm 940 nm i th 0.40 0.30 0.30 0.45 0.40 0.35 0.55 0.50 0.40 a operating current 1) 808 nm 850 nm 940 nm i op 1.3 1.3 1.4 1.5 1.5 1.6 1.8 1.8 1.8 a operating voltage 1) v op 2.0 v differential series resistance r s C 0.2 0.4 w characteristic temperature (threshold) 3) t 0 150 k temperature coefficient of operating current ? i op / ? t 0.5 %/k temperature coefficient of wavelength 4) ?l / ? t 0.25 0.27 0.30 nm/k thermal resistance (junction ? heat sink) r th ja 10 k/w 1) standard operating conditions refer to 1 w cw measured with na = 0.6 2) optical power measurements refer to a detector with na = 0.6 3) model for the thermal behavior of threshold current: i th ( t 2 ) = i th ( t 1 ) exp( t 2 C t 1 )/ t 0 4) depending on emission wavelength
spl cgxx (sfh 4804x2) semiconductor group 3 09.96 optical characteristics ( t a = 25 c) radiant power p opt vs i f mode spectrum i rel vs l ( p opt = 1.0 w) farfield distribution parallel to junction i rel vs q || farfield distribution perpendicular to junction i rel vs q ^
spl cgxx (sfh 4804x2) semiconductor group 4 notes for operation 1. eye protection this laser is a class 4 laser product. refer to the relevant safety regulations for protection during handling and operation. 2. overload protection the specified values are valid as long as the diode has not been not overloaded. voltage spikes from the power supply unit, even when applied for nanoseconds only, may cause irreversible damage to the laser diode. such spikes may occur when the power supply is turned on or off, or they may reach the laser diode from the line via the coupling capacitance of electronically controlled devices. the power supply should therefore be provided with appropriate protection circuits. handling notes 1. package to avoid electrostatic damages it is recommended to observe the same rules as for handling mos-devices. 2. mounting when soldering, gluing or clamping, do not exceed the following limits: max. soldering temperature: 140 c max. soldering time: 10 s max. curing temperature for adhesives: 100 c any deformation of the heat sink by clamping must be avoided. 3. electrical connection the cathode may be bonded by spot-welding, clamping or soldering. in all these cases esd-guidelines must be followed.
spl cgxx (sfh 4804x2) semiconductor group 5 09.96 package outlines (dimensions in mm, unless specified).
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